金士顿 KCS-UC432/64G 64GB DDR4 SDRAM内存模块,双通道,ECC,3200 MHz,注册 金士顿

金士顿 KCS-UC432/64G 64GB DDR4 SDRAM内存模块,双通道,ECC,3200 MHz,注册 金士顿

金士顿 KCS-UC432/64G 64GB DDR4 SDRAM内存模块,双通道,ECC,3200 MHz,注册 金士顿

Kingston KCS-UC432/64G

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产品关键特征

  • 64GB DDR4 SDRAM Memory Module
  • 内存速度:3200 MHz
  • 内存技术:DDR4 SDRAM
  • 内存标准:DDR4-3200/PC4-25600
  • 错误检查:ECC
  • CAS延迟:CL22
  • 内存等级:双通道
  • 内存电压:1.20 V
  • 外形尺寸:DIMM
  • 引脚数量:288引脚
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Kingston

KCS-UC432/64G

京斯顿内存是根据每个品牌系统的精确规格设计、制造和经过严格测试的。它保证兼容,并由终身保修和传奇的京斯顿可靠性支持。

Return Policy

Time to Return

Standard Return Policy

We offer a hassle-free 30-day returns policy for domestic (US) orders, excluding non-refundable items. Refund or Replacement within 30 days of the delivery date. All products that fall under the Standard Return Policy qualify for our 30-Day Hassle-Free Returns. Please see the section above for more details.

Replacement Only Return Policy

Replacement within 30 days of the delivery date.

Manufacturer Only Return Policy

Covered by the manufacturer's warranty. Please refer to the terms and conditions for the manufacturer's warranty or contact the manufacturer.

Holiday Extended Return Policies

Extended Holiday Return Policy.

Qualifying purchases of products displaying the " Extended Holiday Return Policy ", from November 1st, 2023 to December 25, 2023, are eligible for a Refund or Replacement until January 31, 2024.


Extended Holiday Replacement-Only Return Policy

Qualifying purchases of products displaying the " Extended Holiday Replacement-Only Return Policy ", from November 1st, 2023 to December 25, 2023, are eligible for a Replacement until January 31, 2024.

常见问题
Yes, this Kingston 64GB DDR4 SDRAM Memory Module is compatible with the Cisco UCS C225 M6 Rack-Mount Server.
The CAS latency of this memory module is CL22.
This memory module operates at a voltage of 1.20V.
Yes, you can install multiple modules of this Kingston 64GB DDR4 SDRAM Memory Module in your server to increase the total memory capacity.
Yes, this memory module supports dual-channel memory configuration, allowing for increased memory bandwidth and performance.

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